Features
■ RoHS compliant*
■ Low capacitance ~ 2.5 pF
■ ESD protection
■ Surge protection
Applications
■ Personal Digital Assistants (PDAs)
■ Mobile phones & accessories
■ Memory card protection
■ SIM card port protection
■ Portable electronics
CDSOT23-SLVU2.8 - Surface Mount TVS Diode
General Information
The CDSOT23-SLVU2.8 device provides ESD, EFT and Surge protection for high
speed data ports meeting IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-
4-5 (Surge) requirements. The Transient Voltage Suppressor Array o?ers a Working
Peak Reverse Voltage of 2.8 V and Minimum Breakdown Voltage of 3 V.
The SOT23 packaged device will mount directly onto the industry standard SOT23
footprint. Bourns ? Chip Diodes conform to JEDEC standards, are easy to handle with
1
3
standard pick and place equipment and the ?at con?guration minimizes roll away.
2
Electrical Characteristics (@ T A = 25 °C Unless Otherwise Noted)
Peak Pulse Current (t = 8/20 μs)
Parameter
Peak Pulse Power (t p = 8/20 μs) 1
p
Storage Temperature
Operating Temperature
Minimum Breakdown Voltage @ 1 mA
Minimum Snap Back Voltage @ 50 mA
Maximum Working Peak Voltage
Maximum Leakage Current @ V WM
(Pin 3 to Pin 1) or (Pin 2 to Pin 1)
Maximum Clamping Voltage @ I P = 2 A
Maximum Clamping Voltage @ I P = 5 A
(Pin 2 to Pin 1)
Maximum Clamping Voltage @ I P = 30 A
Symbol
P PK
I PPM
T STG
T OPR
V BR
V BR
V WM
I D
V C
V C
V C
Value
600
30
-55 to +150
-55 to +150
3.0
2.8
2.8
1.0
5.5
7.0
8.5
21.0
Unit
W
A
oC
oC
V
V
V
μA
V
V
V
Typical Junction Capacitance @ 0 V, 1 MHz
(Pin 3 to Pin 1 & Pin 2)
(Pin 2 to Pin 1 with Pin 3 NC)
Maximum Junction Capacitance @ 0 V, 1 MHz
Maximum Peak Reverse Voltage @ I = 10 μA
Maximum Reverse Leakage Current @ V WM
Maximum Forward Voltage @ I F = 1 A, 120 μS
C D
C D
V RRM
I DR
V F
20
2.5
3
40
0.1
2
pF
pF
V
μA
V
Note:
1.See Peak Pulse Power vs. Pulse Time.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Speci?cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their speci?c applications.
相关PDF资料
CDSOT23-SM712 IC TVS ARRAY 7V 12V SOT23
CDSOT23-SRV05-4 TVS DIODE 5V 4CH BI SOT23-6
CDWBS16-PLC01-6 IC TVS ARRAY 2-LINE 6V 16SOIC
CE420830 SCR MOD BRIDGE 800V 30A
CE420860 SCR MOD BRIDGE 800V 60A
CE720802 SCR MOD BRIDGE 800V 20A
CEE2X60PF102PY4LF .050 PCI P/F CONNECTOR
CEE2X90PF154FELF CEE 2X90 PRESS FIT 4 BAY
相关代理商/技术参数
CDSOT23-SM712 功能描述:TVS二极管阵列 SOT-23 7V 600W Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-SR208 功能描述:TVS二极管阵列 STEERING DIODE ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-SR724 功能描述:TVS二极管阵列 STEERING DIODE ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-SRV05-4 功能描述:TVS二极管阵列 SOT-23 5V 4DIODE Low Capacitance RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-SRV05-4_12 制造商:BOURNS 制造商全称:Bourns Electronic Solutions 功能描述:Steering Diode TVS Array Combo
CDSOT23-T03 功能描述:TVS二极管阵列 TVS Diode Array 3VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-T03C 功能描述:TVS二极管阵列 TVS Diode Array 3VOLT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
CDSOT23-T03LC 功能描述:TVS二极管阵列 TVS Diode Array 3VOLT LOW CAP RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C